NTJD1155L
TYPICAL PERFORMANCE CURVES (T J = 25 ° C unless otherwise noted)
0.70
0.65
0.60
0.55
0.50
0.45
0.40
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
T J = 125 ° C
T J = 25 ° C
0.35
0.30
0.25
0.20
0.15
0.10
0.05
T J = 125 ° C
T J = 25 ° C
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0.8
I L (AMPS)
Figure 2. V drop vs. I L @ V in = 2.5 V
0.31
I L (AMPS)
Figure 3. V drop vs. I L @ V in = 4.5 V
0.7
I L = 1 A
V ON/OFF = 1.5 to 8 V
0.26
I L = 1 A
V ON/OFF = 1.5 to 8 V
V in = 1.8 V
0.6
0.5
0.4
0.21
0.16
0.3
0.2
0.1
0.0
T J = 125 ° C
T J = 25 ° C
0.11
0.06
0.01
V in = 5 V
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
? 50
? 25
0
25 50
75
100
125
150
V IN (VOLTS)
Figure 4. On ? Resistance vs. Input Voltage
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On ? Resistance Variation with
Temperature
1.7
1.5
1.3
1.1
I L = 1 A
V ON/OFF = 1.5 to 8 V
V in = 5 V
V in = 1.8 V
44
40
36
32
28
24
20
16
12
I L = 1 A
V ON/OFF = 1.5 V
Ci = 10 m F
Co = 1 m F
t d(off)
t r
t f
0.9
8
0.7
? 50
? 25
0
25
50
75
100
125
150
4
0
0
1
2
3
4
t d(on)
5
6
7
8
T J , JUNCTION TEMPERATURE ( ° C)
Figure 6. Normalized On ? Resistance Variation
with Temperature
http://onsemi.com
3
R2 (k W )
Figure 7. Switching Variation
R2 @ V in = 4.5 V, R1 = 20 k W
相关PDF资料
NTJD2152PT4G MOSFET P-CH 8V DUAL ESD SOT-363
NTJD4001NT2G MOSFET N-CH DUAL 30V SOT-363
NTJD4105CT2G MOSFET N/P-CHAN COMPL SOT-363
NTJD4152PT1 MOSFET P-CHAN DUAL 20V SOT-363
NTJD4158CT1G MOSFET N/P-CHAN COMPL SOT-363
NTJD4401NT1G MOSFET 2N-CH 20V 630MA SOT-363
NTJD5121NT2G MOSFET N-CH 60V DUAL ESD SOT363
NTJS3151PT1G MOSFET P-CH 12V 2.7A SOT-363
相关代理商/技术参数
NTJD1155LT1G 功能描述:MOSFET 8V +/-1.3A P-Channel w/Level Shift RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTJD116N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:High Efficiency DC-DC Converters
NTJD2152P 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Trench Small Signal MOSFET
NTJD2152P_06 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Trench Small Signal MOSFET
NTJD2152PT1 功能描述:MOSFET 8V Dual P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTJD2152PT1G 功能描述:MOSFET 8V Dual P-Channel ESD Protection RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTJD2152PT2 功能描述:MOSFET 8V Dual P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTJD2152PT2G 功能描述:MOSFET 8V Dual P-Channel ESD Protection RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube